| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To inexpensively provide a wafer dividing method that can improve cutting precision and has high throughput, when cutting and separating a wafer with a modified region formed by applying laser beams as a starting point of cutting. <P>SOLUTION: In the wafer 10, intervals d1-d3 of the modified region R in respective groups of modified regions Ga-Gc differ, an interval d1 in the group of modified regions Ga on the lowest layer is maximized, and an interval d3 in the group of modified regions Gc on the highest layer is minimized (d1>d2>d3). For setting respective intervals d1-d3 in this manner, pulse oscillation frequencies f1-f3 in laser beams L when forming respective groups of modified regions Ga-Gc are set to different values while the output of laser beams L is set to a fixed value, the pulse oscillation frequency f1 when forming the group of modified regions Ga on the lowest layer is minimized, and the pulse oscillation frequency f3 when forming the group of modified regions Gc on the highest layer is maximized (f1<f2<f3). <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
