| 摘要 |
PROBLEM TO BE SOLVED: To achieve a field-effect transistor capable of decreasing a gate leak current even if micronization is promoted. SOLUTION: The field-effect transistor has a semiconductor substrate 1, a first ferromagnetic electrode 3 whose direction of magnetization is fixed in the first direction, a second ferromagnetic electrode 4 whose direction of magnetization is fixed in substantially the same direction as the first direction, a channel 2 between a first ferromagnetic electrode 3 and the second ferromagnetic electrode 4, and a gate electrode having a ferromagnetic layer 6 that is provided through a gate insulating layer 5 on the channel 2 and whose magnetization direction is fixed in substantially the reverse direction to the first direction. Gate leak current can be decreased by tunnel magnetic resistance effect, because the magnetization direction of the ferromagnetic layer 6 in the gate electrode is fixed in substantially the reverse direction to each of the magnetization directions of the first ferromagnetic electrode 3 and the second ferromagnetic electrode 4. COPYRIGHT: (C)2007,JPO&INPIT
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