| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein a conventional solid-state image pickup element can suppress a dark current by the formation of a gettering layer but the crosstalk becomes large between adjacent pixels. SOLUTION: In the solid-state image pickup element, a plurality of pixels are formed on a semiconductor substrate. The pixels comprise a photoelectric converter for generating and accumulating an amount of charge according to incident light; and an amplifier that includes a charge detection region for transferring the charge accumulated at the photoelectric converter, and outputs a pixel signal according to the amount of charge in the charge detection region. In the solid-state image pickup element, the charge accumulation region of the photoelectric converter is composed of a first first-conductive semiconductor layer, a separation region for electrically separating the mutually adjacent pixels is composed of a second-conductive semiconductor layer, and a gettering layer is composed of a second high-concentration first-conductive semiconductor layer in the separation region. COPYRIGHT: (C)2007,JPO&INPIT
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