| 摘要 |
PROBLEM TO BE SOLVED: To sustain good gate withstand voltage characteristics while reducing the contact resistance between the source and the drain. SOLUTION: An electron travelling layer 12 composed of GaN is formed on a substrate 11 composed of sapphire, a barrier layer 13 composed of InAlN is formed on the electron travelling layer 12, a gate electrode 15 is formed on the barrier layer 13, a cap layer 14 composed of at least one of InGaN, InN and GaN is formed on a region on the opposite sides of the gate electrode 15 on the barrier layer 13, and a source electrode 16 and a drain electrode 17 are formed on the cap layer 14 thus forming the cap layer 14 between the source electrode 16 and drain electrode 17 and the barrier layer 13. COPYRIGHT: (C)2007,JPO&INPIT
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