发明名称 SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME
摘要 A sense amplifier includes: NMOS transistors, drains thereof being coupled to output nodes, gates thereof being coupled to the output nodes, sources thereof being coupled in common to the ground potential node; PMOS transistors, drains thereof being coupled to the drains of the NMOS transistors, sources thereof being coupled to the input nodes; PMOS transistors, drains thereof being coupled to the input nodes, gates thereof being coupled to the output nodes, sources thereof being coupled to the power supply node via a current source device; and NMOS transistors disposed between the output nodes and the ground potential node to be turned on before sensing; and an equalizing transistor disposed between the output nodes.
申请公布号 US2007147112(A1) 申请公布日期 2007.06.28
申请号 US20060563408 申请日期 2006.11.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 EDAHIRO TOSHIAKI;TODA HARUKI
分类号 G11C7/02;G11C16/06 主分类号 G11C7/02
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