| 摘要 |
A page buffer and a reading method comprising a unitary operation adapted to execute either a normal read operation or a copyback read operation using a page buffer are disclosed. The unitary operation comprises initializing a latch to store a first logic value; sensing a voltage level corresponding to a programming state of a selected memory cell; and selectively storing a second logic value in the latch in response to the sensed voltage level, wherein the page buffer enters a programming operation mode when the second logic value is stored in the latch.
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