| 摘要 |
An exemplary thin film transistor substrate ( 200 ) includes a substrate ( 201 ), a gate ( 212 ), a gate insulating layer ( 203 ), an amorphous silicon layer ( 214 ), a pixel electrode ( 216 ), a drain ( 217 ), and a source ( 218 ). The gate is formed at the gate. The gate insulating layer is formed at the gate. The amorphous silicon layer is formed at the gate insulating layer. The transparent conductive layer is formed at the amorphous silicon layer. The pixel electrode is formed at the amorphous silicon layer. The drain is formed at the pixel electrode. The source is formed at the transparent conductive layer. |
