MULTI-WAVELENGTH INTEGRATED SEMICONDUCTOR LASER AND METHOD FOR FABRICATING SAME

摘要

A multi-wavelength integrated semiconductor laser formed by a simpler fabrication process in which variation in light emitting point interval is reduced and electrical characteristics can be enhanced. A first semiconductor laser element (100) having an active layer (AL1) for emitting laser light of first wavelength from a light emitting point (X1) and a second semiconductor laser element (200) having an active layer (AL2) for emitting laser light of second wavelength from a light emitting point (X2) are bonded through a metallic adhesive layer (MC), and the ridge waveguide of at least one semiconductor laser element is formed of an n-type semiconductor. Surfaces of the semiconductor laser elements (100, 200) on the p-type semiconductor side are bonded through a metallic adhesive layer (MC), and a submount (SUB) is bonded through a metal to the surface of the first semiconductor laser element (100) where the ridge waveguide (GN1) is formed.