SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND ELEMENT STRUCTURE MANUFACTURING METHOD

摘要

A method for manufacturing a semiconductor substrate relating to a first side plane is provided with a carry-in step of carrying a base substrate into a processing space partitioned from the external space; a chromium layer forming step of forming a chromium layer on the base substrate by vapor deposition; a nitriding step of forming a chromium nitride film by nitriding the chromium layer; and a first crystalline layer growing step of growing a first crystalline layer of a group III nitride semiconductor on the chromium nitride film. The chromium layer forming step and the nitriding step are characterized in that the steps are continuously performed without having the processing space open to the air.