| 摘要 |
PROBLEM TO BE SOLVED: To further suppress gate leakage current. SOLUTION: A semiconductor device comprises a semiconductor substrate, a channel region formed on the surface of the semiconductor substrate, source and drain regions respectively formed on both sides of the channel region of the semiconductor region, a gate insulating film so formed as to cover the channel region, and a gate electrode formed on the insulating film, wherein the gate insulating film is formed by a super-lattice single-crystal insulator film. COPYRIGHT: (C)2007,JPO&INPIT
|
