EEPROM AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an EEPROM capable of solving a problem that the edge cell has uneven electrical characteristics and a method for manufacturing the same. SOLUTION: The method includes the steps of; forming an element isolation film pattern that defines an active region in a predetermined region on a semiconductor substrate including a memory transistor region and a selection transistor region; forming a gate insulating film having a tunnel region on the active region; and forming an opening that exposes an upper plane of the element isolation film pattern by patterning a first conductive film after forming the first conductive film on a resultant product on which the gate insulating film is formed. On this occasion, the formation is carried out so that the distance between the opening and the neighboring active region can be varied by the width of the element isolation film pattern under the selected opening. COPYRIGHT: (C)2007,JPO&INPIT