SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To unify the thickness of gate oxide films formed in a trench. SOLUTION: The manufacturing method of semiconductor device comprises a first forming process for forming an n--drift region 2 having a resistance higher than that of an n+-silicon carbonate substrate 1, on the n+-silicon carbonate substrate 1 consisting of silicon carbide crystal; a second forming process for forming a trench 8 formed by the first forming process, and arriving at the n--drift region 2; a pouring process for pouring ion whose amount is in accordance with the oxidizing speeds of respective side walls, into a plurality of side walls constituting the inside wall of the trench 8 and having different oxidizing speeds, in accordance with the oxidizing speeds of respective side walls; and a third forming process for forming a gate insulating film 10 having a uniform thickness substantially on the inside walls of the trenches 8, into which the ion is poured by the pouring process. COPYRIGHT: (C)2007,JPO&INPIT