SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving the degradation of NBTI without being accompanied by characteristic variation. SOLUTION: A first MIS transistor formed in the first region (PMOS) in an n-type semiconductor region (101) comprises a first gate insulating film (103), a first gate electrode (104), first extension diffusion layers (106), and a first fluorine diffusion layer (108). The first fluorine diffusion layer (108) is formed in a channel region between the first extension diffusion layers (106), and it is formed so that it extends from the sides of the first extension diffusion layers (106) and overlaps in the region directly under the first gate electrode (104). COPYRIGHT: (C)2007,JPO&INPIT