| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus which can prevent the variation in film quality of a thin film to be formed on a wafer. SOLUTION: The plasma CVD apparatus has, in a vacuum chamber 1, a top electrode 2 formed with discharge ports 2a for discharging a material gas, a bottom electrode 4 to place the wafer 5 on, a support arm 11 for supporting the bottom electrode 4, and a heating lamp 7 arranged below the bottom electrode 4 and the support arm 11. The bottom electrode 4 includes an electrode plate 4a which incorporates an electrode, and an engagement 4b. The end face of the electrode plate 4a is formed with a placement plane 4c to place the wafer 5 on, and the end face of the engagement 4b is formed with a heat receiving plane 4d. The support arm 11 includes a supporter 11a for supporting the edge of the electrode plate 4a of the bottom electrode, and an opening 12 with which the engagement 4b of the bottom electrode is to be engaged. Thermal light beams from the heating lamp 7 are irradiated on the whole surface of the heat receiving plane 4d of the bottom electrode through the opening 12 of the support arm 11 to heat the wafer 5 on the placement plane 4c of the bottom electrode, so that the temperature of the wafer 5 may be uniform in the plane. COPYRIGHT: (C)2007,JPO&INPIT
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