| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistive memory device including selected reference memory cell. SOLUTION: A resistance based random access memory (ReRAM) is provided with a current reference circuit including at least three ReRAM reference cells coupled in parallel with one another. During memory cell data read operation, the selected memory cell and the current reference circuit including the ReRAM reference cell are activated simultaneously, and the current reference circuit is configured to provide a current from the selected memory cell and the reference current from the current reference circuit to a sense amplifying circuit of ReRAM. COPYRIGHT: (C)2007,JPO&INPIT |
