发明名称 Solid state imaging device
摘要 A solid state imaging device has a semiconductor substrate with photodiodes formed thereon. Stacked on the semiconductor substrate are a light shielding layer having openings for the photodiodes, a concave microlens-forming layer having concave lens surfaces on its upper surface, a planarizing layer for covering the concave microlens-forming layer, a color filter, and a convex microlens-forming layer having convex lens surfaces on its upper surface. Each concave lens surface is composed of an arc-shaped incident surface lying at the lowermost part and a reflecting surface extending upwards from a rim of the incident surface. The light rays out of the concave lens surface enter either the incident surface or the reflecting surface of the concave lens surface. The light rays on the reflecting surface reflect off totally and proceed to the incident surface. The light rays on the incident surface are focused toward the photodiode.
申请公布号 US2007146513(A1) 申请公布日期 2007.06.28
申请号 US20060645651 申请日期 2006.12.27
申请人 FUJIFILM CORPORATION 发明人 KUROIWA KARIN
分类号 H04N9/04;H01L27/14;H01L27/148;H04N5/335;H04N5/369 主分类号 H04N9/04
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