发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor device and method with a dual damascene pattern uses buffer layers to prevent photoresist layer poisoning due to a reaction between an interlayer dielectric and a photoresist layer. Embodiments also relate to reducing the effects of plasma damage occurring during an etching or ashing process.
申请公布号 US2007148961(A1) 申请公布日期 2007.06.28
申请号 US20060616257 申请日期 2006.12.26
申请人 KIM TAE W 发明人 KIM TAE W.
分类号 H01L21/4763 主分类号 H01L21/4763
代理机构 代理人
主权项
地址