III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region

摘要

In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6x10¹⁸ cm³ and 5x10¹⁹ cm^-3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6x10¹⁸ cm^-3.