发明名称 System for writing non-volatile memories for increased endurance
摘要 A memory system that incorporates methods of amplifying the lifetime of a counter made up of memory elements, such as EEPROM cells, having finite endurance. A relatively small memory made up of a number of individually accessible write segments, where, depending on the embodiment, each write segment is made up of a single memory cell or a small number of cells (e.g., a byte). A count is encoded so that it is distributed across a number of fields, each associated with one of the write segments, such that as the count is incremented only a single field (or, in the single bit embodiments, occasionally more than one field) is changed and that these changes are evenly distributed across the fields. The changed field is then written to the corresponding segment, while the other write segments are unchanged. Consequently, the number of rewrites to a given write segment is decreased, and the lifetime correspondingly increased, by a factor corresponding to the number of write segments used.
申请公布号 US2007150644(A1) 申请公布日期 2007.06.28
申请号 US20050320916 申请日期 2005.12.28
申请人 PINTO YOSI;GONGWER GEOFFREY S;HONEN OREN 发明人 PINTO YOSI;GONGWER GEOFFREY S.;HONEN OREN
分类号 G06F12/00 主分类号 G06F12/00
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