发明名称 |
NONVOLATILE MEMORY DEVICE AND SYSTEM INCLUDING PHASE-CHANGE OTP MEMORY CELL, AND RELATED METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory capable of safely protecting security information and also changing it as necessary. <P>SOLUTION: This nonvolatile memory includes: a phase-change memory cell array which includes a plurality of normal phase-change memory cells and a plurality of pseudo one time programmable (OTP) phase-change memory cells; a write driver which writes data into the normal and pseudo OTP phase-change memory cells of the phase-change memory cell array; and an OTP controller which selectively disables the write driver. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007164971(A) |
申请公布日期 |
2007.06.28 |
申请号 |
JP20060329896 |
申请日期 |
2006.12.06 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
RI KOSHIN;CHO WOO-YEONG;KIM DU-EUNG;CHO BEAK-HYUNG |
分类号 |
G11C13/00;H01L27/10;H01L27/105;H01L45/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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