发明名称 NONVOLATILE MEMORY DEVICE AND SYSTEM INCLUDING PHASE-CHANGE OTP MEMORY CELL, AND RELATED METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory capable of safely protecting security information and also changing it as necessary. <P>SOLUTION: This nonvolatile memory includes: a phase-change memory cell array which includes a plurality of normal phase-change memory cells and a plurality of pseudo one time programmable (OTP) phase-change memory cells; a write driver which writes data into the normal and pseudo OTP phase-change memory cells of the phase-change memory cell array; and an OTP controller which selectively disables the write driver. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007164971(A) 申请公布日期 2007.06.28
申请号 JP20060329896 申请日期 2006.12.06
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 RI KOSHIN;CHO WOO-YEONG;KIM DU-EUNG;CHO BEAK-HYUNG
分类号 G11C13/00;H01L27/10;H01L27/105;H01L45/00 主分类号 G11C13/00
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