| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an evaluation method for a mask pattern and an evaluation device capable of making lithographic simulation results coincident with the results of actual wafer exposure. <P>SOLUTION: One embodiment of the evaluation method for a mask pattern includes steps of: (S2) acquiring a pattern image of a photomask; (S3) generating sidewall angle data relating to side wall angles of the pattern from the pattern image; (S5) extracting a pattern contour from the pattern image to generate contour data; (S7) carrying out lithographic simulation based on the contour data and the sidewall angle data; and (S8) calculating an exposure latitude. <P>COPYRIGHT: (C)2007,JPO&INPIT |
