| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which both the sure fusion of a trimmed element and a damage reduction of a foundation substrate can be achieved simultaneously. <P>SOLUTION: An element 20 as an object of trimming is arranged on a foundation substrate 10, and an insulating layer 30 is arranged covering the element 20. The insulating layer 30 is formed of a silicon oxide film 31, and it is preferable that the insulating layer 30 is formed of, in concrete terms, silicate glass, such as BPSG etc., containing phosphorus. The thickness (d) of a part of the oxide film 31 covering the trimmed element 20 is about 90 to 270 nm, and the oxide film 31 has a transmission factor of 80% or above over the trimmed element 20 to a trimming laser beam. Even when a silicon nitride film is used whose thickness (d) is about 65 to 195 nm over the trimmed element 20, the above transmission factor of about 80% or above can be obtained. A circuit element 14 is arranged under the trimmed element 20. A silicon nitride film may be arranged between the trimmed element 20 and an oxide film 12. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
