| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method which is capable of polishing a substrate equipped with an insulating film, a conductor film, and a barrier metal film continuously by the use of the same metal polishing liquid; obtaining a polished surface of good planarity; and reducing the occurrence of scratches; and to provide a metal polishing liquid used for it. <P>SOLUTION: The metal polishing liquid is used for chemically, mechanically polishing a semiconductor integrated circuit substrate for making it planar, contains the following components (1), (2), (3), and (4), and is characterized by the fact that it is used for polishing interconnections formed of copper or an alloy containing copper. The component (1) is particles which are within a range of 60 to 150 nm in volume average particle diameter that is obtained through a dynamic light scattering method. The component (2) is particles which are within a range of 10 to 50 nm in volume average particle diameter that is obtained through a dynamic light scattering method. The component (3) is an oxidizing agent. The component (4) is an amino dicarboxylic acid. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
