| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for use of an igniter, including low ON-voltage characteristics, low switching loss characteristics, reverse breakdown voltage characteristic required at least for an igniter circuit, and high surge voltage resistance. SOLUTION: The semiconductor device for use of the igniter includes, on a semiconductor substrate of one conductivity type, an isolation diffusion region of the other conductivity type for connecting one of principal planes of the substrate with the other principal plane, a MOS gate structure, and a pressure-resistant structure surrounding the MOS gate structure on the former principal plane surrounded by the isolation diffusion region. It includes a collector region of the second conductivity type connected at the same potential with the exposed isolation diffusion region, and a field stop layer of the first conductivity type in contact with the semiconductor substrate of the collector region on the other principal plane. COPYRIGHT: (C)2007,JPO&INPIT
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