| 摘要 |
PROBLEM TO BE SOLVED: To suppress electrostatic breakdown as much as possible, which arises in a process applied on a large substrate, in a manufacturing method of a display apparatus. SOLUTION: An electrostatic breakdown trigger section 20 of an MOS structure composed of a semiconductor layer 21 for MOS formation, a first insulating film 13 and a metal layer 22 for MOS formation, is formed outside of a panel area 10P on the large substrate 10. If static electricity arises when carrying or handling the substrate 10, electrostatic breakdown occurs at higher frequency in an electrostatic breakdown trigger section 20 than in the other part on the substrate 10. This is because the MOS structure is weak against the electrostatic breakdown by the static electricity. Electric charge of the static electricity of the substrate 10 is decreased by the electrostatic breakdown outside of the panel area 10P. Consequently, it is substantially suppressed that the electrostatic breakdown affects a display pixel and a driving circuit inside the panel area 10P in the process applied on the large substrate 10. COPYRIGHT: (C)2007,JPO&INPIT
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