发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A method of manufacturing a metal wiring in a semiconductor device includes: forming a via hole by selectively etching an interlayer insulating layer formed on a first metal layer; sequentially forming a first barrier metal layer and a second metal layer on the interlayer insulating layer; etching the first barrier metal layer and the second metal layer in the via hole to a predetermined depth together with selectively etching a surface of the second metal layer; forming a silicon layer on the first barrier metal and the second metal to a predetermined height; forming a second barrier metal layer on the interlayer insulating layer; forming a third metal layer on the second barrier metal layer; and forming a second barrier metal pattern and a third metal layer pattern by patterning the second barrier metal layer and the third metal layer.
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申请公布号 |
US2007148960(A1) |
申请公布日期 |
2007.06.28 |
申请号 |
US20060641037 |
申请日期 |
2006.12.19 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
PARK KEUN S. |
分类号 |
H01L21/4763;H01L21/44 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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