METHOD FOR FORMING COMPRESSIVE CHANNEL LAYER OF PMOS DEVICE USING GATE SPACER, AND PMOS DEVICE MANUFACTURED BY SAME

摘要

PROBLEM TO BE SOLVED: To form a compressive channel layer in a PMOS device by simple processes and at a low price.

SOLUTION: The method is provided for forming a compressive channel layer in a PMOS device and a PMOS device formed by the method. The method includes steps of (a) forming a buffer oxide layer on a silicon semiconductor substrate having a gate oxide layer and a gate electrode thereon, (b) forming a silicon nitride layer on the buffer oxide layer, (c) ion-implanting impurities into the silicon nitride layer, and (d) patterning the silicon nitride layer and the buffer oxide layer into which impurities are implanted to form gate spacers on both sidewalls of the gate electrode.

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