| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a base material for a semiconductor device capable of obtaining a light emission device which has an excellent surface state, obtains high light emission efficiency by reducing a dislocation density, and has a large effective light emission wavelength range; and to provide its manufacturing method. <P>SOLUTION: The base material for the semiconductor device includes a substrate, a superlattice structural layer formed on the substrate, and a base layer for function element formation which is formed on the superlattice structural layer and composed of an AlGaN semiconductor compound. The superlattice structural layer has a periodical structure where not less than three lamination units are superimposed, which are composed of a first low crystalline layer including the AlGaN semiconductor compound lower in crystalline compared with the base layer for function element formation, and a second low crystalline layer including the AlGaN semiconductor compound larger in Al composition ratio compared with the first low crystalline layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
