| 摘要 |
PROBLEM TO BE SOLVED: To provide a decarbonization treatment method and a deposition method capable of decreasing the concentration of carbon in a metallic film so as not to damage the characteristics of the semiconductor device. SOLUTION: A gate insulating film 2 is formed on a silicon substrate 1 that is a semiconductor substrate, next, a tungustic film 3a is formed with CVD using a gas containing W(CO)<SB>6</SB>on the gate insulating film 2. Thereafter, oxidization processing is performed on the substrate in the presence of a reducing atmosphere, and only the carbon is selectively oxidized without oxidizing the tungsten in the tungustic film 3a to decrease the concentration of the carbon contained in the tungustic film 3a. Then, after thermal processing is performed as required, resist coating, patterning, etching and the like are performed, a dopant dispersion region 10 is formed by ion implantation or the like to form the semiconductor device of MOS structure. COPYRIGHT: (C)2007,JPO&INPIT
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