| 摘要 |
PROBLEM TO BE SOLVED: To suppress current concentration caused by breakdown, by making uniform the breakdown in the inside of a semiconductor substrate. SOLUTION: In a semiconductor device of a trench structure, a semiconductor substrate 1 has an inner trench 2a and an outer trench 2b. An emitter region 3 is provided to be adjacent to the respective trenches 2a, 2b. A p-type base region 4 is provided to be adjacent to the emitter region 3 and the trenches 2a, 2b. A first n-type base region 31 is provided to be adjacent to the inner trench 2a. A second n-type base region 32 lower in impurity concentration than the first n-type base region 31 is provided to be adjacent to the outer trench 2b and the first n-type base region 31. Application of an overvoltage causes breakdown in the vicinity of the inner trench 2a, thus reducing current concentration. COPYRIGHT: (C)2007,JPO&INPIT
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