发明名称 WORKING METHOD ON SEMICONDUCTOR WAFER COMPRISING CLEAVED SURFACE, AND SEMICONDUCTOR WAFER OBTAINED THEREBY
摘要 PROBLEM TO BE SOLVED: To provide a working method of a semiconductor wafer comprising a cleaved surface capable of obtaining a wafer of stable precision. SOLUTION: A semiconductor wafer provided by slicing from a semiconductor single crystal ingot is worked in an etching process for removing work distortion of the wafer, before a chamfering process for chamfering the wafer. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007165529(A) 申请公布日期 2007.06.28
申请号 JP20050358877 申请日期 2005.12.13
申请人 HITACHI CABLE LTD 发明人 WATANABE NOBUFUMI;IKEDA TAKESHI;MASUYAMA SHOJI
分类号 H01L21/304;H01L21/02 主分类号 H01L21/304
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