发明名称 IMAGE SENSOR
摘要 Embodiments relate to an image sensor and a method of manufacturing an image sensor. In embodiments, the method may include preparing a semiconductor substrate formed with a plurality of photodiodes, forming an interlayer dielectric layer on the semiconductor substrate, forming a color filter layer on the interlayer dielectric layer, forming a planar layer on the color filter layer, and forming micro-lenses on the planar layer by using heat transfer liquid. Heat is uniformly applied to the micro-lens because the micro-lens is immersed in the heat transfer liquid having the high temperature, so the micro-lenses are prevented from being bonded to each other. Since a curvature surface of the micro-lens may be uniformly formed, the photo-sensitivity and color reproduction of the image sensor may be improved, which may result in a high-quality image sensor.
申请公布号 US2007148373(A1) 申请公布日期 2007.06.28
申请号 US20060616825 申请日期 2006.12.27
申请人 KIM SANG S 发明人 KIM SANG S.
分类号 A41G1/00 主分类号 A41G1/00
代理机构 代理人
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