Cleaning method of apparatus for depositing AI-containing metal film and AI-containing metal nitride film

摘要

A dry cleaning method for an apparatus for depositing a thin film that deposits an Al-containing metal film and an Al-containing metal nitride film is provided. The method includes maintaining a temperature inside of chamber of the apparatus for depositing a thin film at 430° C. or higher and cleaning the inside of the chamber by supplying a cleaning gas including Cl₂ into the chamber. When it is difficult to maintain the temperature inside the chamber at 430° C. or higher, the method includes cleaning the inside of the chamber by using a cleaning gas including Cl₂ plasma. Accordingly, the apparatus for depositing the thin film that deposits a titanium aluminum nitride (TiAlN) film and a similar type thin film can be effectively cleaned without having remaining products and particles.