| 摘要 |
A method for forming a contact hole of a semiconductor device includes: forming a lower pattern over a substrate; forming a spin-on-glass (SOG) layer over the lower pattern; performing a first curing process on the SOG layer; forming an opening exposing a portion of the SOG layer; performing a second curing process on the SOG layer corresponding to a lower portion of the opening; and forming a contact hole exposing the lower pattern.
|
