| 摘要 |
A method of forming a metal insulating layer of a semiconductor device relieves stress due to differential thermal expansion between insulating sub-layers by rounding off sharp edges formed between the sub-layers. A first metal insulating sub-layer is formed over a metal interconnection layer pattern. The first metal insulating sub-layer has sharp profiles due to a step height difference in the metal interconnection layer pattern. The first metal insulating sub-layer is wet etched to round off the sharp profiles. A second metal insulating sub-layer is formed over the first metal insulating sub-layer.
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