| 摘要 |
Embodiments relate to a method of manufacturing a transistor having a metal silicide layer. In embodiments, the method may include sequentially forming a gate insulating layer pattern and a gate conductive layer pattern on a semiconductor substrate, forming a first metal silicide layer on the gate conductive layer pattern and a second metal silicide layer on the semiconductor substrate, forming a spacer layer on side-walls of the gate insulating layer pattern and the gate conductive layer pattern, and forming a source/drain region in the semiconductor substrate below the second metal silicide layer by performing ion implantation.
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