发明名称 |
SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF |
摘要 |
A diode 10 comprises an SOI substrate in which are stacked a semiconductor substrate 20, an insulator film 30, and a semiconductor layer 40. A bottom semiconductor region 60, an intermediate semiconductor region 53, and a surface semiconductor region 54 are formed in the semiconductor layer 40. The bottom semiconductor region 60 includes a high concentration of n-type impurity. The intermediate semiconductor region 53 includes a low concentration of n-type impurity. The surface semiconductor region 54 includes p-type impurity. |
申请公布号 |
WO2007072655(A2) |
申请公布日期 |
2007.06.28 |
申请号 |
WO2006JP323513 |
申请日期 |
2006.11.17 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA;TAKI, MASATO;KAWAKAMI, MASAHIRO;HAYAKAWA, KIYOHARU;ISHIKO, MASAYASU |
发明人 |
TAKI, MASATO;KAWAKAMI, MASAHIRO;HAYAKAWA, KIYOHARU;ISHIKO, MASAYASU |
分类号 |
H01L29/78;H01L21/329;H01L21/336;H01L29/06;H01L29/861 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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