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发明名称
Verfahren zur Herstellung eines Halbleiterspeichers mit Charge-Trapping-Speicherzellen
摘要
申请公布号
DE10324052(B4)
申请公布日期
2007.06.28
申请号
DE20031024052
申请日期
2003.05.27
申请人
INFINEON TECHNOLOGIES AG
发明人
SACHSE, JENS-UWE;DEPPE, JOACHIM;MIKALO, RICARDO;KRAUSE, MATHIAS;RICHTER, RALF;LUDWIG, CHRISTOPH;KLEINT, CHRISTOPH
分类号
H01L21/8247;H01L21/8246;H01L27/115
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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