REMOVAL OF SILICON OXYNITRIDE MATERIAL USING A WET CHEMICAL PROCESS AFTER GATE ETCH PROCESSING,申请号KR20017008986-传众专利搜索

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发明名称	REMOVAL OF SILICON OXYNITRIDE MATERIAL USING A WET CHEMICAL PROCESS AFTER GATE ETCH PROCESSING
摘要
申请公布号	KR100733633(B1)	申请公布日期	2007.06.28
申请号	KR20017008986	申请日期	2001.07.16
申请人		发明人
分类号	H01L21/3063	主分类号	H01L21/3063
代理机构		代理人
主权项
地址

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