METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent degradation of characteristics of an element as much as possible in a semiconductor device having a trench.

SOLUTION: A surface of a trench formed on a one conductive type semiconductor substrate is subjected to hydrogen heat treatment. The impurity concentration of the one conductive type semiconductor substrate is made to be lower than usual. Opposite conduction type impurities are diffused toward the one conductive type semiconductor substrate from the trench. The one conductive impurities are outwardly diffused from a vicinity of the trench by hydrogen heat treatment. After forming insulation films 103 and 105 on a p-type silicon substrate 101, the trench 109 is formed by etching these insulation films and the p-type silicon substrate and they are annealed under a predetermined reducing atmosphere.

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