| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method capable of improving the etching controllability of an insulating film of high dielectric constant. SOLUTION: A hafnium oxide film as a gate insulating film of high dielectric constant of the transistor formed in a semiconductor device on a wafer W as well as a hard mask are applied with an etching process with high sputtering. At this time, the wafer W is carried into a chamber 11 of a plasma processing device 10. A process space S in the chamber 11 is supplied with argon gas, xenon gas, and hydrogen gas at a specified flow rate ratio. The process space S is applied with a high frequency current to generate plasma from the process gas that has been supplied. The hafnium oxide film is etched by assuring a selection ratio against the hard mask. COPYRIGHT: (C)2007,JPO&INPIT
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