发明名称 |
Method for fabricating a semiconductor device and semiconductor device |
摘要 |
The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.
|
申请公布号 |
US2007145557(A1) |
申请公布日期 |
2007.06.28 |
申请号 |
US20070710744 |
申请日期 |
2007.02.26 |
申请人 |
MEIJO UNIVERSITY |
发明人 |
KAMIYAMA SATOSHI;AMANO HIROSHI;IWAYA MOTOAKI;AKASAKI ISAMU;KASUGAI HIDEKI |
分类号 |
H01L23/02;H01L33/22;H01L33/38 |
主分类号 |
H01L23/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|