发明名称 Method for fabricating a semiconductor device and semiconductor device
摘要 The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.
申请公布号 US2007145557(A1) 申请公布日期 2007.06.28
申请号 US20070710744 申请日期 2007.02.26
申请人 MEIJO UNIVERSITY 发明人 KAMIYAMA SATOSHI;AMANO HIROSHI;IWAYA MOTOAKI;AKASAKI ISAMU;KASUGAI HIDEKI
分类号 H01L23/02;H01L33/22;H01L33/38 主分类号 H01L23/02
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