发明名称 |
Method for manufacturing semiconductor device |
摘要 |
Disclosed is a method for manufacturing a semiconductor device. This method includes the step of forming a diffusion barrier film, which is interposed between a silicon film and a metal film and functions to prevent diffusion between the silicon and metal films. The diffusion barrier film is formed of a WSixNy film or a WSix film by using an ALD process.
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申请公布号 |
US2007148943(A1) |
申请公布日期 |
2007.06.28 |
申请号 |
US20060512572 |
申请日期 |
2006.08.30 |
申请人 |
KIM SOO HYUN;LIM KWAN YONG;KIM BAEK MANN;LEE YOUNG JIN;KWAK NOH JUNG;SOHN HYUN CHUL |
发明人 |
KIM SOO HYUN;LIM KWAN YONG;KIM BAEK MANN;LEE YOUNG JIN;KWAK NOH JUNG;SOHN HYUN CHUL |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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