METHOD OF CONTROLLING INTERNAL STRESS IN POLYCRYSTALLINE SILICON-GERMANIUM LAYER LAMINATED ON SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of controlling internal stress in a polycrystalline silicon-germanium layer laminated on a substrate.

SOLUTION: The method of controlling internal stress in a polycrystalline silicon-germanium layer laminated on a substrate includes a step of selecting a range of internal stress in the silicon-germanium layer, a step of selecting evaporation pressure, and a step of evaporation temperature; and at least one of evaporation pressure and evaporation temperature is selected so that internal stress in the silicon-germanium layer becomes within the selected range.

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