| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve light derivation efficiency in a light emitting diode including at least an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer stacked on a substrate oriented in the c axis direction. <P>SOLUTION: A main wavelength peak is set in an ultraviolet region of 290 nm or lower by adjusting an Al content of a light emitting layer 7 among semiconductor layers consisting of AlGaN or AlInGaN or the like, and adjusting an energy band structure of a valence band. Consequently, light emission in TM mode is ensured in TE and TM modes as light propagation modes, and light emission in the TM mode at 240 nm dominates. By utilizing the matter described above, emitted light from an element end surface is used in the TM mode where a reflectance ratio at the element end surface is low to facilitate light derivation to the outside of the element. It is accordingly possible to improve light derivation efficiency compared with cases where light is derived from the surface of a substrate 2 and the surface of the p-type nitride semiconductor layer 9. <P>COPYRIGHT: (C)2007,JPO&INPIT |
