| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a reliable semiconductor device by using an SOI substrate. <P>SOLUTION: When the SOI substrate is manufactured by using a technique typified by SIMOX, ELTRAN, or Smart-Cut; a single-crystal semiconductor substrate is used having a main surface (crystal face) of a ä110} plane. In such an SOI substrate, adhesion is high between a buried insulating layer as an underlayer and a single-crystal silicon layer, and it becomes possible to achieve a semiconductor device with high reliability. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
