| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the occurrence of short circuit is suppressed between a gate electrode and a dummy gate electrode, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device is composed by executing a step in which the gate electrode 4a is formed across a gate insulating film 3a, the dummy gate electrode 4b is formed across a dummy gate insulating film 3b, and the dummy gate electrode 4c is formed across an insulating film for element isolation respectively on a semiconductor substrate 1; a step of forming a metal film on the semiconductor substrate 1 while the gate electrode 4a is exposed and the dummy gate electrodes 4b, 4c are not exposed; and a step of silicidizing at least the upper part of the gate electrode 4a by applying heat treatment to the semiconductor substrate 1. It is possible to suppress the occurrence of a short circuit between the gate electrode 4a and the adjacent dummy gate electrode 4b, since the gate electrode 4a is silicided. The dummy gate electrodes 4b, 4c, however, are not silicided. COPYRIGHT: (C)2007,JPO&INPIT
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