| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory for preventing deterioration in a ferroelectric capacitor by preventing hydrogens from being generated by the contact of metal wiring and an interlayer insulating film, and to provide a manufacturing method of the ferroelectric memory. SOLUTION: The ferroelectric memory 1 comprises the ferroelectric capacitor 2 composed of a lower electrode 8, an upper electrode 10, and a ferroelectric layer 9 held between the pair of electrodes; and a metal wire 33 provided in the interlayer insulating films 25, 14. In the metal wire 33, a part in contact with the interlayer insulating films 25, 14 is covered with a diffusion prevention film 30. The diffusion prevention film 30 has a function as a hydrogen barrier film having hydrogen barrier properties. COPYRIGHT: (C)2007,JPO&INPIT
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