Plasma processing apparatus and plasma processing method

摘要

An RF power (Bottom RF) from a radio-frequency power source 12 is turned off (t 5 ) and the supply of a He gas 14 to a back face of a wafer W is stopped (t 5 ) when an end point detector 17 (EPD) detects an end point (t 5 ), and a high-voltage DC power source 13 (HV) is turned off (t 6 ) under the condition in which an RF power (Top RF) from a radio-frequency power source 11 is controlled to fall within a range in which etching does not progress and plasma discharge can be maintained (t 5 ). This process enables the inhibition of the adhesion of particles while an etching amount is accurately controlled.