发明名称 |
Plasma producing method and apparatus as well as plasma processing apparatus |
摘要 |
Plasma producing method and apparatus as well as plasma processing apparatus utilizing the plasma producing apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a matching box and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device supplies the high-frequency power to each antenna from terminals of the antennas on the same side.
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申请公布号 |
US2007144440(A1) |
申请公布日期 |
2007.06.28 |
申请号 |
US20060586504 |
申请日期 |
2006.10.26 |
申请人 |
NISSIN ELECTRIC CO., LTD. |
发明人 |
YONEDA HITOSHI;DEGUCHI HIROSHIGE;KATO KENJI;SETSUHARA YUICHI |
分类号 |
C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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